Samsung's latest QLC V-NAND adopts multiple breakthrough technologies, among which channel hole etching technology can achieve the highest number of cell layers based on a dual stack architecture. Samsung's first batch of QLC and TLC 9th generation V-NAND provide high-quality memory solutions for various AI applications. Samsung's first 1Tb quad layer cell (QLC) 9th generation V-NAND has officially started mass production.
In April of this year, Samsung launched mass production of its first batch of Layer 3 Cell (TLC) ninth generation V-NAND, and subsequently achieved mass production of QLC ninth generation V-NAND, further consolidating Samsung's position in the high-capacity, high-performance NAND flash memory market.
Sung Hoi Hur, Executive Vice President and Head of Flash Products and Technology at Samsung Electronics, said, "Just four months after the last TLC version went into mass production, QLC's ninth generation V-NAND product has successfully started production, allowing us to provide a complete lineup of SSD solutions that can meet the needs of the artificial intelligence era. With the growing trend of the enterprise SSD market and stronger demand for artificial intelligence applications, we will continue to consolidate Samsung's market position in this field through QLC and TLC's ninth generation V-NAND
Samsung plans to expand the application scope of QLC's ninth generation V-NAND, starting from branded consumer products, to include mobile universal flash memory (UFS), personal computers, and server SSDs, providing services to customers including cloud service providers.
The ninth generation V-NAND of Samsung QLC utilizes multiple innovative achievements and achieves multiple technological breakthroughs.
Samsung's proud Channel Hole Etching technology can achieve the highest number of cell layers in the industry based on a dual stack architecture. Samsung has utilized the technology experience accumulated in TCL's ninth generation V-NAND to optimize the storage unit area and peripheral circuits, resulting in a bit density increase of approximately 86% compared to the previous generation QLC V-NAND.
The Designed Mold technology can adjust the spacing between the word lines (WL) of the control storage units, ensuring that the characteristics of the storage units within the same unit layer and between unit layers remain consistent, achieving optimal results. The more layers of V-NAND, the more important the characteristics of the storage unit. The use of preset mold technology has improved data retention performance by about 20% compared to previous versions, enhancing the reliability of the product.
Predictive Program technology can predict and control the state changes of storage units, minimizing unnecessary operations as much as possible. This technological advancement has doubled the write performance of Samsung QLC's ninth generation V-NAND and increased data input/output speed by 60%.
Low Power Design technology has reduced data reading power consumption by approximately 30% and 50%, respectively. This technology reduces the voltage required to drive NAND memory cells and can only sense necessary bit lines (BL), thereby minimizing power consumption as much as possible.
