Japan's Shin Etsu Chemical Industry has developed large substrates for manufacturing gallium nitride (GaN) semiconductors.
According to media reports, the substrate used for manufacturing gallium nitride compound semiconductors has successfully achieved large-scale production. It is reported that this substrate can be used for 6G communication semiconductors and power semiconductors used in data centers. If gallium nitride is used, stable communication and high-power control can be achieved in the high frequency range, but it has been difficult to produce high-quality large substrates, which has become a barrier to popularization.
Shinetsu Chemical has the technology to prepare gallium nitride crystals based on "QST substrates" (independent substrates using materials such as aluminum nitride). Compared to silicon substrates, thinner and higher quality gallium nitride crystals can be produced. We have successfully developed a QST substrate with a diameter of 300 millimeters, which is about 2.3 times larger than previous products and has the same area as the silicon substrate commonly used in traditional semiconductors.
