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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BD679ASTU
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6414002BD679ASTU ImageAMI Semiconductor / ON Semiconductor

BD679ASTU

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Reference Price(In US Dollars)

In stock
1+
$0.64
10+
$0.564
100+
$0.433
500+
$0.342
1000+
$0.274
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Specifications
  • Part Number
    BD679ASTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 80V 4A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BD679ASTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    2.8V @ 40mA, 2A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-126
  • Series
    -
  • Power - Max
    40W
  • Packaging
    Tube
  • Package / Case
    TO-225AA, TO-126-3
  • Other Names
    BD679ASTU-ND
    BD679ASTUFS
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    19 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A, 3V
  • Current - Collector Cutoff (Max)
    500µA
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    BD679

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