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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP3N60A4D
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HGTP3N60A4D

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Reference Price(In US Dollars)

In stock
800+
$1.409
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Specifications
  • Part Number
    HGTP3N60A4D
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 17A 70W TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.HGTP3N60A4D.pdf
    2.HGTP3N60A4D.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 3A
  • Test Condition
    390V, 3A, 50 Ohm, 15V
  • Td (on/off) @ 25°C
    6ns/73ns
  • Switching Energy
    37µJ (on), 25µJ (off)
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Reverse Recovery Time (trr)
    29ns
  • Power - Max
    70W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    HGTP3N60A4D_NL
    HGTP3N60A4D_NL-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    21nC
  • Detailed Description
    IGBT 600V 17A 70W Through Hole TO-220AB
  • Current - Collector Pulsed (Icm)
    40A
  • Current - Collector (Ic) (Max)
    17A

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