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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NESG2101M05-A
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6272006NESG2101M05-A ImageCEL (California Eastern Laboratories)

NESG2101M05-A

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Reference Price(In US Dollars)

In stock
1+
$1.71
10+
$1.54
100+
$1.238
250+
$1.10
500+
$0.963
1000+
$0.798
2500+
$0.743
5000+
$0.715
Inquiry Online
Specifications
  • Part Number
    NESG2101M05-A
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 2GHZ M05
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.NESG2101M05-A.pdf
    2.NESG2101M05-A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    5V
  • Transistor Type
    NPN
  • Supplier Device Package
    M05
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Bulk
  • Package / Case
    SOT-343F
  • Other Names
    NESG2101M05A
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    11dB ~ 19dB
  • Frequency - Transition
    17GHz
  • Detailed Description
    RF Transistor NPN 5V 100mA 17GHz 500mW Surface Mount M05
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    130 @ 15mA, 2V
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    NESG2101

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