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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2020ENGR
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3924569EPC2020ENGR ImageEPC

EPC2020ENGR

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Reference Price(In US Dollars)

In stock
500+
$4.604
1000+
$4.01
2500+
$3.861
5000+
$3.713
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Specifications
  • Part Number
    EPC2020ENGR
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 60V 60A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2020ENGR.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 16mA
  • Vgs (Max)
    +6V, -4V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    Die
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    2.2 mOhm @ 31A, 5V
  • Power Dissipation (Max)
    -
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    Die
  • Other Names
    917-EPC2020ENGRTR
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 60A (Ta) Surface Mount Die
  • Current - Continuous Drain (Id) @ 25°C
    60A (Ta)

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