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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2301BDS-T1-GE3
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SI2301BDS-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$0.62
10+
$0.521
100+
$0.391
500+
$0.287
1000+
$0.222
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Specifications
  • Part Number
    SI2301BDS-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 2.2A SOT23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI2301BDS-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    950mV @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    100 mOhm @ 2.8A, 4.5V
  • Power Dissipation (Max)
    700mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    SI2301BDS-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    375pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
  • Current - Continuous Drain (Id) @ 25°C
    2.2A (Ta)

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