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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB025N08N3GATMA1
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5739912IPB025N08N3GATMA1 ImageInternational Rectifier (Infineon Technologies)

IPB025N08N3GATMA1

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Reference Price(In US Dollars)

In stock
1+
$6.44
10+
$5.748
100+
$4.714
500+
$3.817
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Specifications
  • Part Number
    IPB025N08N3GATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 120A TO263-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IPB025N08N3GATMA1.pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 270µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    2.5 mOhm @ 100A, 10V
  • Power Dissipation (Max)
    300W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    IPB025N08N3 GCT
    IPB025N08N3 GCT-ND
    IPB025N08N3GATMA1CT
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    14200pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    206nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

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