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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2701TL
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21099262SD2701TL ImageLAPIS Semiconductor

2SD2701TL

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Reference Price(In US Dollars)

In stock
3000+
$0.179
6000+
$0.167
15000+
$0.156
30000+
$0.154
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Specifications
  • Part Number
    2SD2701TL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 12V 2A TUMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.2SD2701TL.pdf
    2.2SD2701TL.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    350mV @ 50mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    TUMT3
  • Series
    -
  • Power - Max
    800mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    3-SMD, Flat Leads
  • Other Names
    2SD2701TLTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    300MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 12V 2A 300MHz 800mW Surface Mount TUMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    2SD2701

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