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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD30T2R
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6042544EMD30T2R ImageLAPIS Semiconductor

EMD30T2R

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Reference Price(In US Dollars)

In stock
8000+
$0.102
16000+
$0.093
24000+
$0.087
56000+
$0.08
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Specifications
  • Part Number
    EMD30T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EMD30T2R.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 30V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    EMT6
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms, 1 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMD30T2R-ND
    EMD30T2RTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz, 260MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V / 140 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA, 200mA
  • Base Part Number
    *MD30

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