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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R8010ANX
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3782178R8010ANX ImageLAPIS Semiconductor

R8010ANX

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Reference Price(In US Dollars)

In stock
1+
$3.67
10+
$3.278
100+
$2.688
500+
$2.176
1000+
$1.835
Inquiry Online
Specifications
  • Part Number
    R8010ANX
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 10A TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    R8010ANX.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220FM
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    560 mOhm @ 5A, 10V
  • Power Dissipation (Max)
    40W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Other Names
    R8010ANXCT
    R8010ANXCT-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    17 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1750pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    62nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 10A (Tc) 40W (Tc) Through Hole TO-220FM
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)

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