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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CSD19537Q3
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CSD19537Q3

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Reference Price(In US Dollars)

In stock
1+
$1.50
10+
$1.326
100+
$1.048
500+
$0.812
1000+
$0.641
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Specifications
  • Part Number
    CSD19537Q3
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 50A 8VSON
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Vgs(th) (Max) @ Id
    3.6V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-VSON (3.3x3.3)
  • Series
    NexFET™
  • Rds On (Max) @ Id, Vgs
    14.5 mOhm @ 10A, 10V
  • Power Dissipation (Max)
    2.8W (Ta), 83W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerVDFN
  • Other Names
    296-44351-1
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    35 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1680pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
  • Current - Continuous Drain (Id) @ 25°C
    50A (Ta)
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