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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > VP0106N3-G
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VP0106N3-G

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Reference Price(In US Dollars)

In stock
1+
$0.76
25+
$0.639
100+
$0.577
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Specifications
  • Part Number
    VP0106N3-G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 0.25A TO92-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    8 Ohm @ 500mA, 10V
  • Power Dissipation (Max)
    1W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    5 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
  • Current - Continuous Drain (Id) @ 25°C
    250mA (Tj)
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