APTM120DA30T1G

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Reference Price(In US Dollars)

In stock

100+

$39.428

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Specifications

Part Number

APTM120DA30T1G
Manufacturer/Brand

Microsemi
Stock Quantity

In stock
Description

MOSFET N-CH 1200V 31A SP1
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

1.APTM120DA30T1G.pdf
2.APTM120DA30T1G.pdf
ECAD Model
Vgs(th) (Max) @ Id

5V @ 2.5mA
Vgs (Max)

±30V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

SP1
Series

-
Rds On (Max) @ Id, Vgs

360 mOhm @ 25A, 10V
Power Dissipation (Max)

657W (Tc)
Packaging

Bulk
Package / Case

SP1
Operating Temperature

-40°C ~ 150°C (TJ)
Mounting Type

Chassis Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

32 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

14560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

560nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

1200V
Detailed Description

N-Channel 1200V 31A (Tc) 657W (Tc) Chassis Mount SP1
Current - Continuous Drain (Id) @ 25°C

31A (Tc)

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APTM120DA30T1G

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