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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MS652S
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MS652S

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Specifications
  • Part Number
    MS652S
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS RF BIPO 25W 2A M123
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MS652S.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    16V
  • Transistor Type
    NPN
  • Supplier Device Package
    M123
  • Series
    -
  • Power - Max
    25W
  • Packaging
    Bulk
  • Package / Case
    M123
  • Operating Temperature
    200°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    10dB
  • Frequency - Transition
    450MHz ~ 512MHz
  • Detailed Description
    RF Transistor NPN 16V 2A 450MHz ~ 512MHz 25W Chassis Mount M123
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 200mA, 5V
  • Current - Collector (Ic) (Max)
    2A

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