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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BUK9E2R8-60E,127
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2896953BUK9E2R8-60E,127 ImageNXP Semiconductors / Freescale

BUK9E2R8-60E,127

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Specifications
  • Part Number
    BUK9E2R8-60E,127
  • Manufacturer/Brand
    Freescale / NXP Semiconductors
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 120A I2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.1V @ 1mA
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I2PAK
  • Series
    TrenchMOS™
  • Rds On (Max) @ Id, Vgs
    2.6 mOhm @ 25A, 10V
  • Power Dissipation (Max)
    349W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    568-9872-5
    934066513127
    BUK9E2R860E127
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    17450pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 120A (Tc) 349W (Tc) Through Hole I2PAK
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

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