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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PHB110NQ06LT,118
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4878111PHB110NQ06LT,118 ImageNXP Semiconductors / Freescale

PHB110NQ06LT,118

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Specifications
  • Part Number
    PHB110NQ06LT,118
  • Manufacturer/Brand
    Freescale / NXP Semiconductors
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 55V 75A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PHB110NQ06LT,118.pdf
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Vgs (Max)
    ±15V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK
  • Series
    TrenchMOS™
  • Rds On (Max) @ Id, Vgs
    7 mOhm @ 25A, 10V
  • Power Dissipation (Max)
    200W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    568-2183-2
    934058553118
    PHB110NQ06LT /T3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3960pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Detailed Description
    N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    75A (Tc)

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