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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PSMN8R5-108ESQ
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3686389PSMN8R5-108ESQ ImageNXP Semiconductors / Freescale

PSMN8R5-108ESQ

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Specifications
  • Part Number
    PSMN8R5-108ESQ
  • Manufacturer/Brand
    Freescale / NXP Semiconductors
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 108V 100A I2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I2PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    8.5 mOhm @ 25A, 10V
  • Power Dissipation (Max)
    263W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    568-11432-5
    934068134127
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5512pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    111nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    108V
  • Detailed Description
    N-Channel 108V 100A (Tj) 263W (Tc) Through Hole I2PAK
  • Current - Continuous Drain (Id) @ 25°C
    100A (Tj)

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