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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > PBSS4160PANP,115
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6363909PBSS4160PANP,115 ImageNexperia

PBSS4160PANP,115

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Reference Price(In US Dollars)

In stock
1+
$0.48
10+
$0.412
100+
$0.307
500+
$0.242
1000+
$0.187
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Specifications
  • Part Number
    PBSS4160PANP,115
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 60V 1A 6HUSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PBSS4160PANP,115.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    120mV @ 50mA, 500mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    6-HUSON-EP (2x2)
  • Series
    -
  • Power - Max
    510mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-UDFN Exposed Pad
  • Other Names
    1727-1072-1
    568-10200-1
    568-10200-1-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    175MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz 510mW Surface Mount 6-HUSON-EP (2x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    150 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A
  • Base Part Number
    PBSS4160

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October 9th, 2024
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