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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > PBSS5160PAP,115
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4480305PBSS5160PAP,115 ImageNexperia

PBSS5160PAP,115

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Reference Price(In US Dollars)

In stock
3000+
$0.165
6000+
$0.155
15000+
$0.144
30000+
$0.136
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Specifications
  • Part Number
    PBSS5160PAP,115
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 60V 1A 6HUSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PBSS5160PAP,115.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    340mV @ 100mA, 1A
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    6-HUSON-EP (2x2)
  • Series
    -
  • Power - Max
    510mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-UDFN Exposed Pad
  • Other Names
    1727-1079-2
    568-10207-2
    568-10207-2-ND
    934066887115
    PBSS5160PAP
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    125MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 510mW Surface Mount 6-HUSON-EP (2x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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October 9th, 2024
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