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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTA115EMB,315
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534636PDTA115EMB,315 ImageNexperia

PDTA115EMB,315

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Reference Price(In US Dollars)

In stock
10000+
$0.085
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Specifications
  • Part Number
    PDTA115EMB,315
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 250MW 3DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 250µA, 5mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    DFN1006B-3
  • Series
    -
  • Resistor - Emitter Base (R2)
    100 kOhms
  • Resistor - Base (R1)
    100 kOhms
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    3-XFDFN
  • Other Names
    934065934315
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    180MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 180MHz 250mW Surface Mount DFN1006B-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    20mA
  • Base Part Number
    PDTA115

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