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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTB123YT,215
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2532801PDTB123YT,215 ImageNexperia

PDTB123YT,215

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Reference Price(In US Dollars)

In stock
1+
$0.33
10+
$0.273
100+
$0.145
500+
$0.095
1000+
$0.065
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Specifications
  • Part Number
    PDTB123YT,215
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 250MW TO236AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.PDTB123YT,215.pdf
    2.PDTB123YT,215.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    TO-236AB (SOT23)
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    250mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    1727-1703-1
    568-11243-1
    568-11243-1-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB (SOT23)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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