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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > PEMH9,115
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733634PEMH9,115 ImageNexperia

PEMH9,115

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Reference Price(In US Dollars)

In stock
4000+
$0.071
8000+
$0.062
12000+
$0.053
28000+
$0.049
100000+
$0.041
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Specifications
  • Part Number
    PEMH9,115
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.3W SOT666
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PEMH9,115.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 250µA, 5mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-666
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    1727-1726-2
    568-11268-2
    568-11268-2-ND
    934056769115
    PEMH9 T/R
    PEMH9 T/R-ND
    PEMH9,115-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    13 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    1µA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    P*MH9

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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