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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PHD9NQ20T,118
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5761897PHD9NQ20T,118 ImageNexperia

PHD9NQ20T,118

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Reference Price(In US Dollars)

In stock
10000+
$0.397
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Specifications
  • Part Number
    PHD9NQ20T,118
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 8.7A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DPAK
  • Series
    TrenchMOS™
  • Rds On (Max) @ Id, Vgs
    400 mOhm @ 4.5A, 10V
  • Power Dissipation (Max)
    88W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    934055766118
    PHD9NQ20T /T3
    PHD9NQ20T /T3-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    959pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 8.7A (Tc) 88W (Tc) Surface Mount DPAK
  • Current - Continuous Drain (Id) @ 25°C
    8.7A (Tc)
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