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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PHT6NQ10T,135
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5974473PHT6NQ10T,135 ImageNexperia

PHT6NQ10T,135

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Reference Price(In US Dollars)

In stock
1+
$0.85
10+
$0.746
100+
$0.576
500+
$0.426
1000+
$0.341
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Specifications
  • Part Number
    PHT6NQ10T,135
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 3A SOT223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PHT6NQ10T,135.pdf
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-223
  • Series
    TrenchMOS™
  • Rds On (Max) @ Id, Vgs
    90 mOhm @ 3A, 10V
  • Power Dissipation (Max)
    1.8W (Ta), 8.3W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    1727-5352-1
    568-6791-1
    568-6791-1-ND
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    633pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
  • Current - Continuous Drain (Id) @ 25°C
    3A (Ta)

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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