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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PMV65XP/MIR
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4422092PMV65XP/MIR ImageNexperia

PMV65XP/MIR

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Specifications
  • Part Number
    PMV65XP/MIR
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V SOT23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PMV65XP/MIR.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    900mV @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-236AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    74 mOhm @ 2.8A, 4.5V
  • Power Dissipation (Max)
    480mW (Ta), 4.17W (Tc)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    934068504215
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    744pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    7.7nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 2.8A (Ta) 480mW (Ta), 4.17W (Tc) Surface Mount TO-236AB
  • Current - Continuous Drain (Id) @ 25°C
    2.8A (Ta)

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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