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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > PQMD12Z
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5724431PQMD12Z ImageNexperia

PQMD12Z

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Reference Price(In US Dollars)

In stock
1+
$0.43
10+
$0.321
100+
$0.20
500+
$0.137
1000+
$0.105
Inquiry Online
Specifications
  • Part Number
    PQMD12Z
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS 0.35W 6DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PQMD12Z.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500µA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    DFN1010B-6
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    47 kOhms
  • Power - Max
    350mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-XFDFN Exposed Pad
  • Other Names
    1727-1479-1
    568-10950-1
    568-10950-1-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    230MHz, 180MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 350mW Surface Mount DFN1010B-6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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