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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PSMN6R3-120ESQ
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974666PSMN6R3-120ESQ ImageNexperia

PSMN6R3-120ESQ

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Reference Price(In US Dollars)

In stock
1+
$2.91
50+
$2.349
100+
$2.115
500+
$1.645
1000+
$1.363
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Specifications
  • Part Number
    PSMN6R3-120ESQ
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 120V 70A I2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PSMN6R3-120ESQ.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I2PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.7 mOhm @ 25A, 10V
  • Power Dissipation (Max)
    405W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    1727-1508
    568-10988-5
    568-10988-5-ND
    934067856127
    PSMN6R3-120ESQ-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    11384pF @ 60V
  • Gate Charge (Qg) (Max) @ Vgs
    207.1nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    120V
  • Detailed Description
    N-Channel 120V 70A (Tc) 405W (Tc) Through Hole I2PAK
  • Current - Continuous Drain (Id) @ 25°C
    70A (Tc)

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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