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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > PUMD10,115
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5259266PUMD10,115 ImageNexperia

PUMD10,115

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Reference Price(In US Dollars)

In stock
1+
$0.37
10+
$0.303
100+
$0.161
500+
$0.106
1000+
$0.072
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Specifications
  • Part Number
    PUMD10,115
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS 6TSSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PUMD10,115.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 250µA, 5mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    6-TSSOP
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    300mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    1727-1154-1
    568-10322-1
    568-10322-1-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    230MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz 300mW Surface Mount 6-TSSOP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    MD10

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