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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR221F00L
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UNR221F00L

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Specifications
  • Part Number
    UNR221F00L
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW MINI3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    Mini3-G1
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    UN221F-(TX)
    UN221F-TX
    UN221FTR
    UN221FTR-ND
    UNR221F00LTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount Mini3-G1
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
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