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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NP109N055PUJ-E1B-AY
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5146746NP109N055PUJ-E1B-AY ImageRenesas Electronics America

NP109N055PUJ-E1B-AY

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Specifications
  • Part Number
    NP109N055PUJ-E1B-AY
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 55V MP-25ZP/TO-263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NP109N055PUJ-E1B-AY.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    3.2 mOhm @ 55A, 10V
  • Power Dissipation (Max)
    1.8W (Ta), 220W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10350pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    55V
  • Detailed Description
    N-Channel 55V 110A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263
  • Current - Continuous Drain (Id) @ 25°C
    110A (Ta)

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