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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NP33N06YDG-E1-AY
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618581NP33N06YDG-E1-AY ImageRenesas Electronics America

NP33N06YDG-E1-AY

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Specifications
  • Part Number
    NP33N06YDG-E1-AY
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 33A 8HSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NP33N06YDG-E1-AY.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-HSON
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    14 mOhm @ 16.5A, 10V
  • Power Dissipation (Max)
    1W (Ta), 97W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SMD, Flat Lead Exposed Pad
  • Other Names
    NP33N06YDG-E1-AY-ND
    NP33N06YDG-E1-AYTR
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3900pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON
  • Current - Continuous Drain (Id) @ 25°C
    33A (Tc)

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