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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJH60D5BDPQ-E0#T2
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4407228RJH60D5BDPQ-E0#T2 ImageRenesas Electronics America

RJH60D5BDPQ-E0#T2

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Reference Price(In US Dollars)

In stock
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$5.26
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Specifications
  • Part Number
    RJH60D5BDPQ-E0#T2
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 75A 200W TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJH60D5BDPQ-E0#T2.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 37A
  • Test Condition
    300V, 37A, 5 Ohm, 15V
  • Td (on/off) @ 25°C
    50ns/130ns
  • Switching Energy
    400µJ (on), 810µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    25ns
  • Power - Max
    200W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    RJH60D5BDPQE0T2
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Gate Charge
    78nC
  • Detailed Description
    IGBT Trench 600V 75A 200W Through Hole TO-247
  • Current - Collector (Ic) (Max)
    75A
  • Base Part Number
    RJH60D

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