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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK0601DPN-E0#T2
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1379277RJK0601DPN-E0#T2 ImageRenesas Electronics America

RJK0601DPN-E0#T2

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Specifications
  • Part Number
    RJK0601DPN-E0#T2
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 110A TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJK0601DPN-E0#T2.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    3.1 mOhm @ 55A, 10V
  • Power Dissipation (Max)
    200W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10000pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    141nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 110A (Ta) 200W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    110A (Ta)

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