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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK2006DPE-00#J3
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4336932RJK2006DPE-00#J3 ImageRenesas Electronics America

RJK2006DPE-00#J3

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Specifications
  • Part Number
    RJK2006DPE-00#J3
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 40A LDPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJK2006DPE-00#J3.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-LDPAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    59 mOhm @ 20A, 10V
  • Power Dissipation (Max)
    100W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-83
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 40A (Ta) 100W (Tc) Surface Mount 4-LDPAK
  • Current - Continuous Drain (Id) @ 25°C
    40A (Ta)

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