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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK6002DPH-E0#T2
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1292175RJK6002DPH-E0#T2 ImageRenesas Electronics America

RJK6002DPH-E0#T2

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Reference Price(In US Dollars)

In stock
3000+
$0.589
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Specifications
  • Part Number
    RJK6002DPH-E0#T2
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 2A TO251
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJK6002DPH-E0#T2.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-251
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.8 Ohm @ 1A, 10V
  • Power Dissipation (Max)
    30W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    165pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    6.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 2A (Ta) 30W (Tc) Through Hole TO-251
  • Current - Continuous Drain (Id) @ 25°C
    2A (Ta)

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