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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJP65T54DPM-A0#T2
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RJP65T54DPM-A0#T2

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Specifications
  • Part Number
    RJP65T54DPM-A0#T2
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    IGBT TRENCH 650V 60A TO-3PFP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJP65T54DPM-A0#T2.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.68V @ 15V, 30A
  • Test Condition
    400V, 30A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    35ns/120ns
  • Switching Energy
    330µJ (on), 760µJ (off)
  • Supplier Device Package
    TO-3PFP
  • Series
    -
  • Power - Max
    63.5W
  • Packaging
    Tube
  • Package / Case
    SC-94
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Gate Charge
    72nC
  • Detailed Description
    IGBT Trench 650V 60A 63.5W Through Hole TO-3PFP
  • Current - Collector (Ic) (Max)
    60A

New MCUs Enhance Performance, Efficiency, and Security for ...

October 28th, 2024

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October 7th, 2024
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