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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BDW83C-TO218
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5894433BDW83C-TO218 ImageSTMicroelectronics

BDW83C-TO218

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Specifications
  • Part Number
    BDW83C-TO218
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 15A TO-218
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BDW83C-TO218.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 150mA, 15A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-218
  • Series
    -
  • Power - Max
    130W
  • Packaging
    Tube
  • Package / Case
    TO-218-3, TO-218AC
  • Other Names
    BDW83CTO218
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 15A 130W Through Hole TO-218
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 6A, 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    15A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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