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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BUL416T
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1910533BUL416T ImageSTMicroelectronics

BUL416T

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Reference Price(In US Dollars)

In stock
1+
$2.89
50+
$2.457
100+
$2.129
500+
$1.813
1000+
$1.529
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Specifications
  • Part Number
    BUL416T
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 800V 6A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BUL416T.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    800V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.33A, 4A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    110W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-10558-5
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 800V 6A 110W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    18 @ 700mA, 5V
  • Current - Collector Cutoff (Max)
    250µA
  • Current - Collector (Ic) (Max)
    6A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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