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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SCT10N120
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1259863SCT10N120 ImageSTMicroelectronics

SCT10N120

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Reference Price(In US Dollars)

In stock
1+
$12.41
10+
$11.408
100+
$9.635
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Specifications
  • Part Number
    SCT10N120
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1.2KV TO247-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.SCT10N120.pdf
    2.SCT10N120.pdf
    3.SCT10N120.pdf
  • Vgs(th) (Max) @ Id
    3.5V @ 250µA
  • Vgs (Max)
    +25V, -10V
  • Technology
    SiCFET (Silicon Carbide)
  • Supplier Device Package
    HiP247™
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    690 mOhm @ 6A, 20V
  • Power Dissipation (Max)
    150W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    497-16597-5
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 400V
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 20V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    N-Channel 1200V 12A (Tc) 150W (Tc) Through Hole HiP247™
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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