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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STB11NM60-1
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2773177STB11NM60-1 ImageSTMicroelectronics

STB11NM60-1

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Specifications
  • Part Number
    STB11NM60-1
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 11A I2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STB11NM60-1.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I2PAK
  • Series
    MDmesh™
  • Rds On (Max) @ Id, Vgs
    450 mOhm @ 5.5A, 10V
  • Power Dissipation (Max)
    160W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Other Names
    497-5379-5
    STB11NM60-1-ND
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 11A (Tc) 160W (Tc) Through Hole I2PAK
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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