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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STB38N65M5
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3340350STB38N65M5 ImageSTMicroelectronics

STB38N65M5

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Reference Price(In US Dollars)

In stock
1+
$10.37
10+
$9.333
100+
$7.674
500+
$6.43
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Specifications
  • Part Number
    STB38N65M5
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 30A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STB38N65M5.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK
  • Series
    MDmesh™ V
  • Rds On (Max) @ Id, Vgs
    95 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    190W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    497-13086-1
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    71nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    30A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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