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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STFW12N120K5
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6429609STFW12N120K5 ImageSTMicroelectronics

STFW12N120K5

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Reference Price(In US Dollars)

In stock
1+
$12.61
10+
$11.346
300+
$8.573
600+
$7.816
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Specifications
  • Part Number
    STFW12N120K5
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1200V 12A TO-3PF
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.STFW12N120K5.pdf
    2.STFW12N120K5.pdf
    3.STFW12N120K5.pdf
    4.STFW12N120K5.pdf
  • Vgs(th) (Max) @ Id
    5V @ 100µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    ISOWATT-218FX
  • Series
    MDmesh™ K5
  • Rds On (Max) @ Id, Vgs
    690 mOhm @ 6A, 10V
  • Power Dissipation (Max)
    63W (Tc)
  • Packaging
    Tube
  • Package / Case
    ISOWATT218FX
  • Other Names
    497-17908
    STFW12N120K5-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1370pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    44.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    N-Channel 1200V 12A (Tc) 63W (Tc) Through Hole ISOWATT-218FX
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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