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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGB19NC60KDT4
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3612804STGB19NC60KDT4 ImageSTMicroelectronics

STGB19NC60KDT4

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Specifications
  • Part Number
    STGB19NC60KDT4
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 35A 125W D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGB19NC60KDT4.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 12A
  • Test Condition
    480V, 12A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    30ns/105ns
  • Switching Energy
    165µJ (on), 255µJ (off)
  • Supplier Device Package
    D2PAK
  • Series
    PowerMESH™
  • Reverse Recovery Time (trr)
    31ns
  • Power - Max
    125W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    497-7007-1
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    55nC
  • Detailed Description
    IGBT 600V 35A 125W Surface Mount D2PAK
  • Current - Collector Pulsed (Icm)
    75A
  • Current - Collector (Ic) (Max)
    35A
  • Base Part Number
    STG*19NC

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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