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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGD4M65DF2
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2063060STGD4M65DF2 ImageSTMicroelectronics

STGD4M65DF2

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Reference Price(In US Dollars)

In stock
2500+
$0.375
5000+
$0.357
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Specifications
  • Part Number
    STGD4M65DF2
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRENCH GATE FIELD-STOP IGBT, M S
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGD4M65DF2.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Test Condition
    400V, 4A, 47 Ohm, 15V
  • Td (on/off) @ 25°C
    12ns/86ns
  • Switching Energy
    40µJ (on), 136µJ (off)
  • Supplier Device Package
    DPAK
  • Series
    M
  • Reverse Recovery Time (trr)
    133ns
  • Power - Max
    68W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    497-16963-2
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    15.2nC
  • Detailed Description
    IGBT Trench Field Stop 650V 8A 68W Surface Mount DPAK
  • Current - Collector Pulsed (Icm)
    16A
  • Current - Collector (Ic) (Max)
    8A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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