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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGP10NB60SD
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6487395STGP10NB60SD ImageSTMicroelectronics

STGP10NB60SD

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Reference Price(In US Dollars)

In stock
1+
$3.80
50+
$3.225
100+
$2.795
500+
$2.379
1000+
$2.007
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Specifications
  • Part Number
    STGP10NB60SD
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 29A 80W TO220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGP10NB60SD.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    1.75V @ 15V, 10A
  • Test Condition
    480V, 10A, 1 kOhm, 15V
  • Td (on/off) @ 25°C
    700ns/1.2µs
  • Switching Energy
    600µJ (on), 5mJ (off)
  • Supplier Device Package
    TO-220AB
  • Series
    PowerMESH™
  • Reverse Recovery Time (trr)
    37ns
  • Power - Max
    80W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    497-5008-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    33nC
  • Detailed Description
    IGBT 600V 29A 80W Through Hole TO-220AB
  • Current - Collector Pulsed (Icm)
    80A
  • Current - Collector (Ic) (Max)
    29A
  • Base Part Number
    STG*10NB

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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