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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW10M65DF2
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4041901STGW10M65DF2 ImageSTMicroelectronics

STGW10M65DF2

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Reference Price(In US Dollars)

In stock
1+
$1.86
10+
$1.67
100+
$1.342
500+
$1.103
1000+
$0.914
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Specifications
  • Part Number
    STGW10M65DF2
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRENCH GATE FIELD-STOP IGBT M SE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGW10M65DF2.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 10A
  • Test Condition
    400V, 10A, 22 Ohm, 15V
  • Td (on/off) @ 25°C
    19ns/91ns
  • Switching Energy
    120µJ (on), 270µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    M
  • Reverse Recovery Time (trr)
    96ns
  • Power - Max
    115W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    497-16969
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    28nC
  • Detailed Description
    IGBT Trench Field Stop 650V 20A 115W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    40A
  • Current - Collector (Ic) (Max)
    20A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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