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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW40H65DFB
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158579STGW40H65DFB ImageSTMicroelectronics

STGW40H65DFB

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Reference Price(In US Dollars)

In stock
1+
$4.03
30+
$3.426
120+
$2.969
510+
$2.527
1020+
$2.132
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Specifications
  • Part Number
    STGW40H65DFB
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 80A 283W TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 40A
  • Test Condition
    400V, 40A, 5 Ohm, 15V
  • Td (on/off) @ 25°C
    40ns/142ns
  • Switching Energy
    498µJ (on), 363µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    62ns
  • Power - Max
    283W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    497-14365
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    210nC
  • Detailed Description
    IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    160A
  • Current - Collector (Ic) (Max)
    80A
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