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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGYA120M65DF2
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1152735STGYA120M65DF2 ImageSTMicroelectronics

STGYA120M65DF2

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Reference Price(In US Dollars)

In stock
1+
$11.03
10+
$10.133
100+
$8.558
600+
$7.613
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Specifications
  • Part Number
    STGYA120M65DF2
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRENCH GATE FIELD-STOP IGBT, M S
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGYA120M65DF2.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 120A
  • Test Condition
    400V, 120A, 4.7 Ohm, 15V
  • Td (on/off) @ 25°C
    66ns/185ns
  • Switching Energy
    1.8mJ (on), 4.41mJ (off)
  • Supplier Device Package
    MAX247™
  • Series
    *
  • Reverse Recovery Time (trr)
    202ns
  • Power - Max
    625W
  • Packaging
    Tube
  • Package / Case
    TO-247-3 Exposed Pad
  • Other Names
    497-16976
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT, Trench Field Stop
  • Gate Charge
    420nC
  • Detailed Description
    IGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™
  • Current - Collector Pulsed (Icm)
    360A
  • Current - Collector (Ic) (Max)
    160A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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