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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STH110N10F7-2
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3642367STH110N10F7-2 ImageSTMicroelectronics

STH110N10F7-2

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Reference Price(In US Dollars)

In stock
1+
$3.51
10+
$3.174
100+
$2.551
500+
$1.984
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Specifications
  • Part Number
    STH110N10F7-2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N CH 100V 110A H2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    H2Pak-2
  • Series
    DeepGATE™, STripFET™ VII
  • Rds On (Max) @ Id, Vgs
    6.5 mOhm @ 55A, 10V
  • Power Dissipation (Max)
    150W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    497-13549-1
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    38 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5117pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2
  • Current - Continuous Drain (Id) @ 25°C
    110A (Tc)
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